Navitas GaN Power ICs Drive Revolutionary Performance at Key Taiwan Power Electronics Event

Navitas looks forward to demonstrating how monolithic integration of power, drive and logic – all in GaN – leads to a new generation of high-efficiency, high-density chargers and adapters for smartphone, laptop, consumer, TV, and new energy applications

Navitas Semiconductor announced today that Peter Huang, Director Field Application & Technical Marketing, will deliver a keynote presentation titled, “GaN Power ICs Enable Next Generation Power Adaptor Design” at the Micro Electronics 2018 Power Design and Power Components Technology Forum, in Taipei on January 30th 2018. Huang will share new insights on how the industry’s first and only Gallium Nitride (GaN) power ICs create dramatic increases in speed, efficiency and densities for a broad range of power systems. Navitas is the silver sponsor of the conference, which presents an interactive forum for innovative manufacturers, partners, and customers to share expertise in accelerating adoption of new GaN and SiC devices.

“After 40 years of slow, inefficient silicon devices, the power electronics industry is entering an exciting era of new materials, new devices, new magnetics, new controllers and imaginative topologies,” said Huang. “Navitas looks forward to demonstrating how monolithic integration of power, drive and logic – all in GaN – leads to a new generation of high-efficiency, high-density chargers and adapters for smartphone, laptop, consumer, TV, and new energy applications.”

The conference will be held at the GIS TAIPEI TECH Convention Center, Taipei on January 30th, 2018 from 13.00 to 17.10 pm. Organized by Micro Electronics.

To request a meeting at the conference, please contact info(At)navitassemi(dot)com or call +1 ThinkGaNIC (+1 844-654-2642).

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